GA20JT12-263 - GeneSiC Semiconductor

Mfr. #:
GA20JT12-263
Description:
TRANS SJT 1200V 45A
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Documents

NAMETYPE
DatasheetsGA20JT12-263
Online CatalogSilicon Carbide (SiC) Super Junction FETs

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerGeneSiC Semiconductor
Series-
Packaging-
Part StatusActive
FET TypeJunction Transistor, Normally Off
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Rds On (Max) @ Id, Vgs60 mOhm @ 20A
Vgs(th) (Max) @ Id-
Gate Charge (Qg) @ Vgs-
Input Capacitance (Ciss) @ Vds3091pF @ 800V
Power - Max282W
Operating Temperature175°C (TJ)
Mounting Type-
Package / Case-
Supplier Device Package-

Resources

NAMETYPE
Standard Package50
Other Names1242-1189
GA20JT12-247ISO
GA20JT12247ISO
TagsGA20J GA20 GA2

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