SI5449DC-T1-GE3 - Vishay/Siliconix

Mfr. #:
SI5449DC-T1-GE3
Description:
MOSFET P-CH 30V 3.1A 1206-8
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Delivery
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Documents

NAMETYPE
DatasheetsSI5449DC
Video FileMOSFET Technologies for Power Conversion

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingTape & Reel (TR)
Part StatusObsolete
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.1A (Ta)
Rds On (Max) @ Id, Vgs85 mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id600mV @ 250µA (Min)
Gate Charge (Qg) @ Vgs11nC @ 4.5V
Input Capacitance (Ciss) @ Vds-
Power - Max1.3W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

Resources

NAMETYPE
Standard Package3,000
TagsSI5449 SI544 SI54 SI5

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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