SI2311DS-T1-GE3 - Vishay/Siliconix

Mfr. #:
SI2311DS-T1-GE3
Description:
MOSFET P-CH 8V 3A SOT23
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Delivery
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Documents

NAMETYPE
DatasheetsSI2311DS
Video FileMOSFET Technologies for Power Conversion

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingTape & Reel (TR)
Part StatusObsolete
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs45 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) @ Vgs12nC @ 4.5V
Input Capacitance (Ciss) @ Vds970pF @ 4V
Power - Max710mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

Resources

NAMETYPE
Standard Package3,000
TagsSI2311 SI231 SI23 SI2

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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