TK100L60W,VQ - Toshiba Semiconductor & Storage

Mfr. #:
TK100L60W,VQ
Description:
MOSFET N CH 600V 100A TO3P(L)
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Documents

NAMETYPE
DatasheetsTK100L60W
Online CatalogSuper Junction FETs

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingTube
Part StatusActive
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureSuper Junction
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C100A (Ta)
Rds On (Max) @ Id, Vgs18 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.7V @ 5mA
Gate Charge (Qg) @ Vgs360nC @ 10V
Input Capacitance (Ciss) @ Vds15000pF @ 30V
Power - Max797W
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3PL
Supplier Device PackageTO-3P(L)

Resources

NAMETYPE
Standard Package100
Other NamesTK100L60W,VQ(O
TK100L60WVQ
TagsTK100 TK10 TK1

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