Mfr. #:
MPSH10RLRA
Description:
RF Transistor NPN 25V 650MHz 350mW Through Hole TO-92-3
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Documents

NAMETYPE
DatasheetsMPSH10
PCN Obsolescence/ EOLMultiple Devices 27/Jun/2007

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - Bipolar (BJT) - RF
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)25V
Frequency - Transition650MHz
Noise Figure (dB Typ @ f)-
Gain-
Power - Max350mW
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 4mA, 10V
Current - Collector (Ic) (Max)-
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device PackageTO-92-3

Resources

NAMETYPE
Standard Package10
Other NamesMPSH10RLRAOSCT
TagsMPSH10RLRA MPSH10R MPSH10 MPSH1 MPSH MPS

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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Payment

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