BUK7E3R5-60E,127 - NXP Semiconductors

Documents

NAME	TYPE
Datasheets	BUK7E3R5-60E
Online Catalog	N-Channel Logic Level Gate FETs

NAME	TYPE
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Manufacturer	NXP Semiconductors
Series	Automotive, AEC-Q101, TrenchMOS™
Packaging	Tube
Part Status	Active
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Rds On (Max) @ Id, Vgs	3.5 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) @ Vgs	114nC @ 10V
Input Capacitance (Ciss) @ Vds	8920pF @ 25V
Power - Max	293W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package	I2PAK

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